Jiyan Dai - Ferroic Materials for Smart Systems

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Presents state-of-the-art knowledge?from basic insights to applications?on ferroic materials-based devices <br> <br> This book covers the fundamental physics, fabrication methods, and applications of ferroic materials and covers bulk, thin films, and nanomaterials. It provides a thorough overview of smart materials and systems involving the interplays among the mechanical strain, electrical polarization, magnetization, as well as heat and light. Materials presented include ferroelectric, multiferroic, piezoelectric, electrostrictive, magnetostrictive, and shape memory materials as well as their composites. The book also introduces various sensor and transducer applications, such as ultrasonic transducers, surface acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. <br> <br> Ferroic Materials for Smart Systems: Fabrication, Devices and Applications introduces advanced measurement and testing techniques in ferroelectrics, including FeRAM and ferroelectric tunnelling based resistive switching. It also looks at ferroelectricity in emerging materials, such as 2D materials and high-k gate dielectric material HfO2. Engineering considerations for device design and fabrication are examined, as well as applications for magnetostrictive devices. Multiferroics of materials possessing both ferromagnetic and ferroelectric orders is covered, along with ferroelastic materials represented by shape memory alloy and magnetic shape memory alloys. <br> <br> -Brings together physics, fabrication, and applications of ferroic materials in a coherent manner <br> -Discusses recent advances in ferroic materials technology and applications <br> -Covers dielectric, ferroelectric, pyroelectric and piezoelectric materials <br> -Introduces electrostrictive materials and magnetostrictive materials <br> -Examines shape memory alloys and magneto-shape-memory alloys <br> -Introduces devices based on the integration of ferroelectric and ferromagnetic materials such as multiferroic memory device and ME coupling device for sensor applications <br> <br> Ferroic Materials for Smart Systems: Fabrication, Devices and Applications will appeal to a wide variety of researchers and developers in physics, materials science and engineering. <br>

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9 Chapter 9Figure 9.1 Illustration of multiferroics with expected P–H and M–E Figure 9.2 Relationship between ferroelectrics, ferromagnetics, multiferroics,...Figure 9.3 Ferroelectric hysteresis loops of epitaxial BFO thin films along di...Figure 9.4 (a) Crystal structure of rhombohedral BFO and its ferroelectric pol...Figure 9.5 Domain structures in BFO with (a) 71°, (b) 109°, and (c) 180° domai...Figure 9.6 (a) G‐type antiferromagnetic plane of BFO is perpendicular to the f...Figure 9.7 (a) original polarization, (b) after 71° rotation, (c) after 109° r...Figure 9.8 (a) Schematic diagram of the composite ( t pis the thickness of the ...Figure 9.9 (a) Photograph of a Metglas/PVDF laminate, (b) the unimorph, and (c...Figure 9.10 Temperature‐dependent magnetization in self‐assembled nanostructur...Figure 9.11 (a) Theoretical ME coupling effect in nano and bulk systems with 1...Figure 9.12 (a) Low‐magnification TEM images of 11‐layered PZT/CFO nanocomposi...

10 Chapter 10Figure 10.1 Various laminates operated in longitudinal vibration mode: L‐longi...Figure 10.2 Magnetoelastic–electric equivalent circuit at resonance.Figure 10.3 Schematic diagram of the ME laminate composite device with Terfeno...Figure 10.4 Schematic diagram of an automated ME measurement system.Figure 10.5 (a) Electrical impedance ( Z ) and phase angle ( θ ) spectra for ...Figure 10.6 V ME( V 3is the voltage across the piezoelectric plate) as a functi...Figure 10.7 Magnetoelectric voltage coefficient ME Vas a function of dc bias m...Figure 10.8 Schematic diagram of a stress‐biased PMN‐PT single crystal/Terfeno...Figure 10.9 Frequency dependence of ME vas a function of preloading stress for...Figure 10.10 MERAM based on exchange‐bias coupling between a multiferroic that...Figure 10.11 Schematic, TEM image (inset) and voltage output of an ME read hea...Figure 10.12 Schematic illustration of artificial multiferroic tunnel junction...Figure 10.13 Schematic diagram of low‐field MFTJ.Figure 10.14 Electroresistance change of MFTJ at 40 K for 10 cycles. The corre...Figure 10.15 Magnetism of NiFe and LSMO showing the hysteresis loops.Figure 10.16 (a) Resistance changes with different magnetic fields at 8 K show...

11 Chapter 11Figure 11.1Figure 11.1 Ferroelastic hysteresis and atomic switching in Pb 3(PO 4Figure 11.2 (a) Austenite phase (B2) and (b) martensite lattice structure (B19...Figure 11.3 Lattice cell of NiTi and four martensite variants developed from o...Figure 11.4 A schematic diagram of a typical differential scanning calorimeter...Figure 11.5 Typical transformation–temperature curve of NiTi SMA under constan...Figure 11.6 Shape memory effect in a uniaxial SMA.Figure 11.7 Illustration of (a) one‐way and (b) two‐way memory effects.Figure 11.8 Stress–strain curve illustrating superelastic behavior of SMA when...Figure 11.9 Glasses made of shape memory alloy.Figure 11.10 Illustrations of Ni 2MnGa structured models: (a) 3D cubic structur...Figure 11.11 Schematic illustrations of (a) martensitic transformation and (b)...Figure 11.12 A typical twin variants with the 90° and the 180° magnetic domain...Figure 11.13 Schematic illustrations of a Ni–Mn–Ga single crystal under increa...Figure 11.14 MFIS dependence of applied magnetic field illustrates the change ...Figure 11.15 (a) Schematic diagram of the proposed heterostructure. (b) CME co...

Guide

1 Cover

2 Table of Contents

3 Begin Reading

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Ferroic Materials for Smart Systems

From Fundamentals to Device Applications

Jiyan Dai

Copyright Author Prof Jiyan Dai The Hong Kong Polytechnic University - фото 1

Copyright

Author

Prof. Jiyan Dai

The Hong Kong Polytechnic University

Department of Applied Physics

Hung Hom

Kowloon

Hong Kong

Cover

© antoniokhr/Getty Images;

(graph) Courtesy of Professor Jiyan Dai,

The Hong Kong Polytechnic Univeristy

All books published by Wiley‐VCHare carefully produced. Nevertheless, authors, editors, and publisher do not warrant the information contained in these books, including this book, to be free of errors. Readers are advised to keep in mind that statements, data, illustrations, procedural details or other items may inadvertently be inaccurate.

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