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Email : kunalsinha84@yahoo.co.in

Guenifi Naima1* and Shiromani Balmukund Rahi2

1LEA Electronics Department, University Mostefa Benboulaid of Batna 2, Batna, Algeria

2Department of Electrical Engineering, Indian Institute of Technology Kanpur, India

Abstract

Tunnel FET, a quantum device nowadays known as the best suitable candidate for the future of ultra-low-power applications, due to a distinct current transport mechanism, known as band-to-band ( B2B ) tunneling. This device is recommended as a replacement for conventional Metal-Oxide-Semiconductor ( MOS) FET due to limitation of subthreshold slope (i.e., SS < 60 mV/ dec at T = 300 K), a bottleneck issue for modern low-power design and process engineers. In this chapter, we have mainly focused on double gate ( DG ) TFET , having band engineering and high - k dielectrics. Due to successful implementation of both these scientific suggestions, the DG -TFET shows improved device characteristics in terms of current efficiency ( ION ), leakage current ( IOFF ), subthreshold slope ( SS ), ambipolar current ( Iamb ), transconductance ( gm ), transconductance efficiency ( gm/IDS ), switching response time (ι d ), and power delay product ( PDP ). In this chapter, the transfer ( Id -Vg ), C - V and RF characteristics DG -TFET are investigated in detail.