Electrical and Electronic Devices, Circuits, and Materials

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The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials.
This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

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2 Chapter 2 Figure 2.1 Schematic of double gate (a) hetero structure (b) homostructure tunne... Figure 2.2 Energy band-diagram (OFF-State and ON-State) for homo DG -TFET contai... Figure 2.3 Energy band-diagram (OFF-State and ON-State) for hetero structure DG ... Figure 2.4 Transfer characteristic of homo structure double gate TFET. Figure 2.5 Transfer characteristic of hetero structure double gate TFET. Figure 2.6 Comparision of ambipolar current vs. applied gate drive voltage (V GS)... Figure 2.7 Device transfer characteristics for double gate N- TFET hetero struct... Figure 2.8 Sensitivity of transconductance ( gm ) with applied gate voltage ( VGS ) ... Figure 2.9 3D - transconductance ( gm ), cut-frequency ( fT ) and applied gate drive... Figure 2.10 3D - transconductance (g m), cut-frequency (f T) and applied gate driv... Figure 2.11 The varibility of C-V characteristics with applied gate drive voltag... Figure 2.12 3D - transconductance (g m), GBW and applied gate drive voltage (V GS)... Figure 2.13 3D - transconductance (g m), GBW and applied gate drive voltage (V GS)... Figure 2.14 Transconductance efficiency, gm/IDS with applied gate voltage ( VGS ) ... Figure 2.15 Sensitivity of delay time with applied gate voltage (V GS) and compar... Figure 2.16 Sensitivity of power delay product (PDP) with applied gate voltage (...

3 Chapter 3 Figure 3.1 (a) The development of supercapacitors in different countries [Reprod... Figure 3.2 Schematic diagram of (a) an electrostatic capacitor, (b) an electric ... Figure 3.3 Strategies for improving the energy density of supercapacitors [Repro... Figure 3.4 Mechanism of ion transport in PEO [Reproduced with permission from Re... Figure 3.5 Types of additive based polymer electrolytes. Figure 3.6 (a) CV curves of the all-solid-state supercapacitor with B-GPE under ... Figure 3.7 Ragone plot of the SSC based on two GPEs (a) and the capacitance rete... Figure 3.8 (a) Cyclic voltammograms obtained at 50 mV/s, (b) Capacitance retenti... Figure 3.9 (a) Specific capacitance of Cell#1 and Cell#2 versus charge–discharge... Figure 3.10 (a) Comparison of charge–discharge curves at current for EDLC I, EDL... Figure 3.11 Ragone plots (gravimetric specific energy versus specific power) for... Figure 3.12 (a) CV curves at 10 mV s -1and (b) GCD curves at 1mA cm -2of NPG@PAN...

4 Chapter 4 Figure 4.1 Tunable filter replacing filter bank [5] (a) Receiver system with mul... Figure 4.2 Layout of the hairpin bandpass filter. Figure 4.3 (a) S 21and (b) S 11of hairpin bandpass filter. Figure 4.4 Fractal DGS (Back/GND) portion of hairpin bandpass filter. Figure 4.5 Simulated return loss characteristics (a) S 21and (b) S 11of haripin ... Figure 4.6 Comparison of simulated response (a)S 21(b) S 11of bandpass filter wi... Figure 4.7 Testing/measurement of fabricated hairpin bandpass filter with fracta... Figure 4.8 Comparison of simulated and measured result (a) S 21and (b) S 11of ha... Figure 4.9 Hairpin bandpass filter with fractal DGS with varactor diodes. Figure 4.10 (a) S 21of tunable hairpin bandpass filter with fractal DGS (b) magn... Figure 4.11 (a) S 11of tunable hairpin bandpass filter with fractal DGS (b) magn...

5 Chapter 5 Figure 5.1 GaAs-based HEMTs crosssection view. Figure 5.2 The schematic view of InP-based HEMTs. Figure 5.3 The schematic view of GaN-based HEMTs.Figure 5.4 Demonstration of the standard GaN Wurtzite structure lattice: (a) N-f...Figure 5.5 AlGaN/GaN heterostructure energy band diagram, (a). Before contact, (...

6 Chapter 6Figure 6.1 (a) Circuit for the experimental set-up, (b) Complete set-up for the ...Figure 6.2 Voltage-time plots for source, resistor and sample (a) before denatur...Figure 6.3 Demonstration of (a) checking non-linearity in vRt plot, m 1and m 2...Figure 6.4 Current-voltage characteristics showing the concept of hysteresis-lin...Figure 6.5 (a) Current-voltage characteristics for different concentrations of f...Figure 6.6 for different concentration of food (albumin and milk) in samples fit...Figure 6.7 Plots of vsupplyt , vRt and vsamplet for (a) 103.30 mg/mL (al...Figure 6.8 Sm for different concentration of food (albumin and milk) in samples ...Figure 6.9 Voltage-time plots of source, resistor and sample in protein blend (C...Figure 6.10 ‘Hysteresis-lines’ drawn on Lissajous plots of current and voltage f...Figure 6.11 Sensitivity versus concentrations of protein blend (Category II) alo...

7 Chapter 7Figure 7.1 Block Diagram of 1T-DRAM (MOS) [11].Figure 7.2 (a) DRAM with a sense amplifier.Figure 7.2 (b) Read ‘0’ operation.Figure 7.2 (c) Read ‘1’ Operation.Figure 7.2 (d) Write ‘1’ Operation.Figure 7.2 (e) Write ‘0’ Operation.Figure 7.3 CNT structure with chiral vectors.Figure 7.4 1T-DRAM memory cell with CNT-FET.Figure 7.5 Symbol for P-type 4-Terminal FinFET.Figure 7.6 Symbol for N-type 4-Terminal FinFET.Figure 7.7 (a) Block Diagram of 1T-DRAM (FinFET) with the sense amplifier.Figure 7.7 (b) Read ‘0’ operation.Figure 7.7 (c) Read ‘1’ operation.Figure 7.7 (d) Write ‘1’ operation.Figure 7.7 (e) Write ‘0’ operation.Figure 7.8 (a) Symbol for p-type TFET.Figure 7.8 (b) Symbol for n-type TFET.Figure 7.9 (a) Structure of 1T-DRAM (TFET) with the sense amplifier.Figure 7.9 (b) Read ‘0’ operation.Figure 7.9 (c) Read ‘1’ operation.Figure 7.9 (d) Write ‘1’ operation.Figure 7.9 (e) Write ‘0’ operation.

8 Chapter 8Figure 8.1 Light wave analogy to show reflected and transmitted beams from a sam...Figure 8.2 PNA Network Analyzer with 85070E dielectric probe kit.Figure 8.3 Dielectric properties measurement techniques used for the agriculture...Figure 8.4 Frequency dependence of the (a) dielectric constant (ε') and (b) diel...Figure 8.5 Variation of (a) dielectric constant (ε') and (b) dielectric loss fac...Figure 8.6 Moisture variation of (a) dielectric constant (ε') and (b) dielectric...Figure 8.7 Correlation between dielectric properties and physical/chemical prope...

9 Chapter 9Figure 9.1 The first solar cell battery.Figure 9.2 Time Line for Solar cell (Ref.: Solarium.in).Figure 9.3 Constructional details of Solar cell.Figure 9.4 Construction of Solar cell with metal rings.Figure 9.5 Silicon wafers.Figure 9.6 Polycrystalline material with grain-like structure.Figure 9.7 Process employed for making multicrystalline cells.Figure 9.8 Solar cell connection in series.Figure 9.9Figure 9.10 Parallel connection of cells.Figure 9.11 Current voltage characteristics for series connection.Figure 9.12 Series parallel arrangement of solar cells.Figure 9.13 Current and voltage characteristics for parallel connection.Figure 9.14 Solar panel connections.Figure 9.15 PN Junction solar cell with resistive load.

10 Chapter 10Figure 10.1 (a) Schematic of a typical CIGS thin film solar cell device structur...Figure 10.2 (a) The block diagram of the experimental set-up for the solar cell ...Figure 10.3 The dark J-V characteristics of CIGS/CdS hetero-junction having diff...Figure 10.4 The dark J-V characteristics of CIGS/CdS heterojunction heat soaked ...Figure 10.5 Light J-V characteristics of CIGS solar cell with Ag grid. Some of t...Figure 10.6 The dark J-V characteristics of CIGS/CdS structure having a various ...Figure 10.7 The light J-V characteristics of CIGS/CdS structure having a differe...Figure 10.8 The dark and J-V characteristics of CIGS/CdS/i-ZnO structure having ...Figure 10.9 (a) Dark and (b) Light J-V characteristics of CIGS complete solar ce...Figure 10.10 The dark J-V of CIGS/CdS/i-ZnO structure having different thickness...Figure 10.11 The J-V characteristics, (a) in dark and, (b) in light of CIGS sola...Figure 10.12 Spectral response of CIGS solar cell having different thicknesses o...Figure 10.13 The dark J-V of CIGS/CdS/i-ZnO structure having different thickness...Figure 10.14 (a) Dark, (b) light J-V characteristics of CIGS solar cell device h...Figure 10.15 Spectral response of CIGS solar cell having different thicknesses o...Figure 10.16 The photograph of a complete CIGS solar cell with the measurement p...

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